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C4NP Preliminary Test Data

Tutorial #63
George Riley
May 2006

Suss MicroTec presented a report of preliminary C4NP manufacturing and reliability test results at the IMAPS Device Packaging Conference on March 21. Manufacturing data included bump height distribution and bump shear. The results show that the C4NP process is very robust.

Reliability data included temperature cycling, temperature-humidity testing, and high temperature storage testing, all under a variety of conditions. No failures were found for up to 2,000 cycles of -40°C to 115°C temperature cycling, or for 2,000 hours of 150°C storage, or for 264 hours of biased temperature/humidity testing.

Table 1 gives the distribution of bump heights for two lead-free solder materials. The precise control over solder volume which is inherent in the injection molding process gave excellent uniformity. SAC bumps had a wafer mean bump height of 101.3μm, with a wafer sigma of 2.7 and a chip sigma of 1.7. SnCu bumps had a mean height of 79.9μm, with a wafer sigma of 2.8μm and a chip sigma of 2.3μm.

Wafer Size, (mm) 200 200
Chip Size (mm) 14.7 by 14.7 14.7 by 14.7
Bumps per chip 2,452 2,452
Bumps per wafer 284,432 284,432
Bump pattern Array Array
Bump pitch (mils) 4 on 9 4 on 9
Wafer quantity 3 3
Pb-free alloy Sn3.8Ag0.7Cu Sn0.7Cu
Bump heights (μm)
Wafer mean 101.3 79.9
Wafer sigma 2.7 2.8
Chip sigma 1.7 2.3

Table 1. Bump height distribution

These tests included six 200mm wafers, three bumped with SAC and three with SnCu alloys. Each 14.7mm die had 2,452 four mil bumps on nine mil pitch, for a total of 284,432 bumps per wafer.

Table 2 compares bump shear data for the injection-molded C4 bumps with plated bumps of the same two materials. The measured shear strengths of the C4NP bumps were not significantly different from those of plated bumps, both when initially deposited, and after 8 and 13 reflows.


Table 2. Bump Shear Data

Table 3 shows humidity testing, temperature cycling, and high temperature storage results after JEDEC conditioning. No failures occurred for the stated test times.

Test Description

Results

JL4 + HAST 110°C/85%RH/3.7V/264hours

0/48 fail

JL4 + DTC -40°C/115°C/2000 cycles

0/42 fail

JL4 + ATC 0/125°C/3000 cycles

0/41 fail

JL4 + HTS 150°C/2000hours

0/43 fail

 

Table 3. Reliability test results after JEDEC level 4 conditioning.

 

Table 4 shows biased temperature/humidity and temperature cycling for two different die sizes. Again, no failures occurred.

Test Description

Results

JL3 + HAST 130°C/85%RH/no Bias/96hours

0/23 fail

JL3 + DTC -55°C/125°C/1000 cycles

0/39 fail

Table 4A: Reliability test data, 14.7mm die test data

 

Test Description

Results

JL4 + HAST 130°C/85%RH/3.7V/96hours

0/15 fail

JL4 + DTC -40°C/125°C/1000 cycles

0/72 fail

Table 4B Reliability test data, 18.5 mm die.

Summary: Preliminary results to date verify that there are no inherent failure mechanisms attributable to the C4NP process. Qualification testing is scheduled for completion later this year.

FOR MORE INFORMATION

Klaus Ruhmer et al., “C4NP – First Manufacturing & Reliability Data for High End Flip Chip Solder Bumping” IMAPS Device Packaging Conference, Scottsdale, Arizona, March, 2006.

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